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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 RJU7032PJWS-00#W0 $13.40 | Renesas Electronics Corporation | POWER TRS1 CAR POWER IGBT DIO SA | Tube | - | - | - | - |
| Toshiba Semiconductor and Storage | IGBT TRANS MODULE TO3PN | Tray | - | - | - | - | |
| onsemi | IGBT TRENCH FS 1200V 50A TO-247 | Bulk | TO-247-3 | Through Hole | FGH | -55°C ~ 150°C (TJ) | |
 SGB02N120ATMA1 $2.00 | Infineon Technologies | IGBT NPT 1200V 6.2A TO263-3-2 | Tape & Reel (TR),Cut Tape (CT) | PG-TO263-3-2 | Surface Mount | - | -55°C ~ 150°C (TJ) |
SGB06N60ATMA1 $0.79 | Infineon Technologies | IGBT NPT 600V 12A TO263-3-2 | Tape & Reel (TR) | PG-TO263-3-2 | Surface Mount | - | -55°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT NPT 1200V 16.5A TO263-3-2 | Tape & Reel (TR) | PG-TO263-3-2 | Surface Mount | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 20A TO263-3-2 | Tape & Reel (TR) | PG-TO263-3-2 | Surface Mount | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 1200V 30A TO263-3-2 | Tape & Reel (TR) | PG-TO263-3-2 | Surface Mount | - | -55°C ~ 150°C (TJ) |
