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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 400V D2PAKBulk--*-
Infineon TechnologiesIGBT NPT 600V 31A TO263-3-2BulkPG-TO263-3-2Surface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBTBulk--*-
Infineon TechnologiesIGBT NPT 600V 40A TO263-3-2Tape & Reel (TR)PG-TO263-3-2Surface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 41A TO263-3-2Tape & Reel (TR)PG-TO263-3-2Surface Mount--55°C ~ 150°C (TJ)
onsemiIGBT 390V 20A D2PAKTubeD2PAKSurface Mount--
onsemiIGBT 390V 20A D2PAKBulkD2PAKSurface Mount--
onsemiIGBT D2PAK 350V 20ABulk--*-
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