IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
SGH23N60UFDTU	onsemi	IGBT 600V 23A TO-3PN	Tube	TO-3PN	Through Hole	-	-55°C ~ 150°C (TJ)
SGH30N60RUFDTU	onsemi	IGBT 600V 48A 235W TO3P	Tube	TO-3P	Through Hole	-	-55°C ~ 150°C (TJ)
SGH30N60RUFTU $3.37	onsemi	IGBT 600V 48A TO-3PN	Tube	TO-3PN	Through Hole	-	-55°C ~ 150°C (TJ)
SGH40N60UFDM1TU $1.84	onsemi	IGBT 600V 40A 160W TO3P	Tube	TO-3P	Through Hole	-	-55°C ~ 150°C (TJ)
SGH40N60UFDTU $1.98	onsemi	IGBT 600V 40A 160W TO3P	Bulk,Tube	TO-3P	Through Hole	-	-55°C ~ 150°C (TJ)
SGH40N60UFTU $3.22	Fairchild Semiconductor	IGBT 600V 40A TO-3P	Bulk	TO-3P	Through Hole	-	-55°C ~ 150°C (TJ)
SGH80N60UFDTU	onsemi	IGBT 600V 80A 195W TO3P	Tube	TO-3P	Through Hole	-	-55°C ~ 150°C (TJ)
SGH80N60UFTU	onsemi	IGBT 600V 80A 195W TO3P	Tube	TO-3P	Through Hole	-	-55°C ~ 150°C (TJ)