SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Search productSearch post
— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT NPT 1200V 6.2A TO262-3 | Tube | PG-TO262-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() SGL160N60UFDTU $3.94 | onsemi | IGBT 600V 160A TO-264-3 | Tube | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 160A TO-264-3 | Tube | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() SGL40N150DTU $10.74 | Fairchild Semiconductor | IGBT 1500V 40A HPM F2 | Tube | HPM F2 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() SGL40N150TU $7.85 | Fairchild Semiconductor | IGBT 1500V 40A HPM F2 | Tube | HPM F2 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 80A TO-264-3 | Tube | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() SGL50N60RUFTU $2.30 | onsemi | IGBT 600V 80A TO-264-3 | Tube | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() SGL5N150UFTU $1.25 | onsemi | IGBT 1500V 10A TO-264-3 | Tube | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) |

The activity of extra discounts on wholesale prices is in full swing…
Please fill in your contact information and we will send you the latest wholesale price list.

