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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() SGP10N60AXKSA1 $0.92 | Infineon Technologies | IGBT NPT 600V 20A TO220-3 | Bulk,Tube | PG-TO220-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() SGP10N60RUFDTU $0.92 | onsemi | IGBT 600V 16A TO-220-3 | Bulk,Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() SGP13N60UFDTU $1.11 | Fairchild Semiconductor | IGBT 600V 13A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() SGP13N60UFTU $0.21 | Fairchild Semiconductor | IGBT 600V 13A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT NPT 1200V 30A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() SGP15N60RUFTU $2.79 | Fairchild Semiconductor | IGBT 600V 24A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT NPT 600V 31A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() SGP20N60HSXKSA1 $1.50 | Infineon Technologies | IGBT NPT 600V 36A TO220-3 | Tube,Tube | PG-TO220-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) |

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