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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() SGP6N60UFDTU $0.51 | Fairchild Semiconductor | IGBT 600V 6A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() SGR15N40LTF $0.38 | onsemi | IGBT TRENCH 400V TO-252AA | Tape & Reel (TR) | TO-252AA | Surface Mount | - | -40°C ~ 150°C (TJ) |
![]() SGR15N40LTM $0.74 | Fairchild Semiconductor | IGBT TRENCH 400V TO-252 | Bulk | TO-252 (DPAK) | Surface Mount | - | -40°C ~ 150°C (TJ) |
![]() SGR20N40LTF $0.60 | onsemi | IGBT TRENCH 400V TO-252AA | Tape & Reel (TR) | TO-252AA | Surface Mount | - | -40°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 16A TO-220F-3 | Tube | TO-220F-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() SGS10N60RUFTU $0.50 | Fairchild Semiconductor | IGBT 600V 16A TO-220F-3 | Tube | TO-220F-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() SGS13N60UFDTU $0.47 | Fairchild Semiconductor | IGBT 600V 13A TO-220F-3 | Tube | TO-220F-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() SGS23N60UFDTU $0.71 | onsemi | IGBT 600V 23A TO-220F-3 | Tube,Tube | TO-220F-3 | Through Hole | - | -55°C ~ 150°C (TJ) |

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