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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 1500V 10A TO-220F-3TubeTO-220F-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 8A TO-220F-3TubeTO-220F-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT TRENCH 400V IPAKTubeIPAKThrough Hole--40°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT TRENCH 400V IPAKTubeIPAKThrough Hole--40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 20A TO247-3TubePG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 16A TO-263Tape & Reel (TR)TO-263 (D2PAK)Surface Mount--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 13A TO-263BulkTO-263 (D2PAK)Surface Mount--
Infineon TechnologiesIGBT NPT 1200V 30A TO247-3TubePG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
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