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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 SGW50N60HSFKSA1 $2.68 | Infineon Technologies | IGBT NPT 600V 100A TO247-3 | Bulk,Tube | PG-TO247-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 75A TO-247-3 | Bulk | TO-247-3 | Through Hole | SMPS | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT TRENCH FS 600V 6A DIE | Bulk | Die | Surface Mount | TrenchStop™ | -40°C ~ 175°C (TJ) | |
| Infineon Technologies | IGBT TRENCH FS 600V 10A DIE | Bulk | Die | Surface Mount | TrenchStop™ | -40°C ~ 175°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 6A DIE | Bulk | Die | Surface Mount | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 6A DIE | Bulk | Die | Surface Mount | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 6A DIE | Bulk | Die | Surface Mount | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 6A DIE | Bulk | Die | Surface Mount | - | -55°C ~ 150°C (TJ) |
