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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 SGP20N60XKSA1 $1.16 | Infineon Technologies | IGBT NPT 600V 40A TO220-3 | Bulk,Tube | PG-TO220-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 23A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT 600V 23A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 41A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 41A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) | |
 SGP40N60UFTU $3.21 | Fairchild Semiconductor | IGBT 600V 40A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
SGP5N60RUFDTU $1.05 | Fairchild Semiconductor | IGBT 600V 8A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
SGP5N60RUFTU $0.43 | Fairchild Semiconductor | IGBT 600V 8A TO-220 | Bulk | TO-220 | Through Hole | - | -55°C ~ 150°C (TJ) |
