Product categories

Filter by price :
IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Screen Default Ranking Price By Date
Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT TRENCH 900V 60A TO-264-3TubeTO-264-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH 900V 60A TO-264-3TubeTO-264-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 2.4A SOT-223-4Tape & Reel (TR)SOT-223-4Surface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 1200V 6.2A TO220-3TubePG-TO220-3-1Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 6A TO220-3TubePG-TO220-3-1Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 9.4A TO220-3Tube,TubePG-TO220-3-1Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 12A TO220-3TubePG-TO220-3-1Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 1200V 16.5A TO220-3TubePG-TO220-3-1Through Hole--55°C ~ 150°C (TJ)
Add ComparisonUp to 4 can be added