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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | IGBT 1500V 10A TO-3PF | Tube | TO-3PF | Through Hole | - | -55°C ~ 150°C (TJ) | |
 SGF80N60UFTU $4.38 | Fairchild Semiconductor | IGBT 600V 80A TO-3PF | Bulk | TO-3PF | Through Hole | - | -55°C ~ 150°C (TJ) |
SGF80N60UFTU-ON $4.38 | onsemi | IGBT, 80A, 600V, N-CHANNEL | Bulk | - | - | * | - |
SGH10N60RUFDTU $1.94 | Fairchild Semiconductor | IGBT 600V 16A TO-3PN | Bulk | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) |
SGH15N120RUFDTU $2.65 | Fairchild Semiconductor | IGBT 1200V 24A TO-3P | Bulk | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
SGH15N120RUFTU $3.37 | Fairchild Semiconductor | IGBT 1200V 24A TO-3P | Bulk | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 24A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT 600V 32A 195W TO3P | Tube | TO-3P | Through Hole | - | -55°C ~ 150°C (TJ) |
