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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() RJP63F3ADPP-B1#T2F $1.82 | Renesas Electronics Corporation | N CH IGBT | Bulk | - | - | * | - |
![]() RJP63F3DPP-Z0#T2 $2.16 | Renesas Electronics Corporation | N CH IGBT | Bulk | - | - | * | - |
![]() RJP63G4DPE-00#J3 $2.41 | Renesas Electronics Corporation | N CH IGBT | Bulk | - | - | * | - |
![]() RJP65T43DPM-00#T1 $5.23 | Renesas Electronics Corporation | IGBT TRENCH 650V 40A TO-3PFM | Tube | TO-3PFM | Through Hole | - | 175°C (TJ) |
![]() RJP65T43DPQ-A0#T2 $3.17 | Renesas Electronics Corporation | IGBT TRENCH 650V 60A TO-247A | Tube | TO-247A | Through Hole | - | 175°C (TJ) |
![]() RJP65T54DPM-A0#T2 $4.15 | Renesas Electronics Corporation | IGBT TRENCH 650V 60A TO-3PFP | Tube | TO-3PFP | Through Hole | - | 175°C (TJ) |
| Renesas Electronics Corporation | IGBT TRENCH 650V 60A TO-3PF | Tube | TO-3PF | Through Hole | - | 175°C (TJ) | |
![]() RJQ7031PJWS-00#W0 $23.69 | Renesas Electronics Corporation | POWER TRS1 CAR POWER IGBT DIO SA | Tube | - | - | - | - |

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