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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Renesas Electronics CorporationN CH IGBTBulk--*-
Renesas Electronics CorporationN CH IGBTBulk--*-
Renesas Electronics CorporationN CH IGBTBulk--*-
Renesas Electronics CorporationIGBT TRENCH 650V 40A TO-3PFMTubeTO-3PFMThrough Hole-175°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 650V 60A TO-247ATubeTO-247AThrough Hole-175°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 650V 60A TO-3PFPTubeTO-3PFPThrough Hole-175°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 650V 60A TO-3PFTubeTO-3PFThrough Hole-175°C (TJ)
Renesas Electronics CorporationPOWER TRS1 CAR POWER IGBT DIO SATube----
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