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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT NPT 600V 20A TO263-3-2Tape & Reel (TR)PG-TO263-3-2Surface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 31A TO263-3-2Tape & Reel (TR)PG-TO263-3-2Surface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 31A TO263-3-2Tape & Reel (TR),BulkPG-TO263-3-2Surface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 31A TO263-3-2BulkPG-TO263-3-2Surface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 27A TO263-3-2Tape & Reel (TR)PG-TO263-3-2Surface Mount--55°C ~ 150°C (TJ)
SemikronIGBT,Six-Pack,1200V,50ARetail Package--*-
SemikronIGBT,Six-Pack,1200V,50ARetail Package--*-
Infineon TechnologiesIGBT NPT 1200V 6.2A TO220-3TubePG-TO220-3-1Through Hole--55°C ~ 150°C (TJ)
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