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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 SKP02N60XKSA1 $0.61 | Infineon Technologies | IGBT | Bulk | - | - | * | - |
| Infineon Technologies | IGBT NPT 600V 9.4A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 12A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 20A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 31A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) | |
 SKW07N120FKSA1 $3.26 | Infineon Technologies | IGBT NPT 1200V 16.5A TO247-3 | Tube,Tube | PG-TO247-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT NPT 1200V 30A TO247-3 | Tube | PG-TO247-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT NPT 600V 31A TO247-3 | Tube | PG-TO247-3-1 | Through Hole | - | -55°C ~ 150°C (TJ) |
