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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT NPT 600V 40A TO247-3Tube,TubePG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 36A TO247-3Tube,TubePG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 1200V 46A TO247-3TubePG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 41A TO247-3TubePG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 41A TO247-3TubePG-TO247-3-1Through Hole--55°C ~ 150°C (TJ)
SLA5222
SLA5222
$8.59
Sanken Electric USA Inc.IGBT 600V 30A PFCTube7-SIPThrough Hole-150°C (TJ)
SLA5227
SLA5227
$3.34
Sanken Electric USA Inc.IGBT 600V 30A 12-SIPTube12-SIPThrough Hole-150°C (TJ)
onsemiIC MODULE PIM 100VTray40-PIM/Q2PACK (93x47)Chassis Mount-175°C (TJ)
Add ComparisonUp to 4 can be added