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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 SNXH160B120L2Q0PG $18.10 | Analog Devices Inc. | SNXH160B120L2Q0PG - Integrated p | Bulk | - | - | - | - |
 SNXH160T120L2Q1PG $58.45 | onsemi | 160A 1200V PIM Q1PACK | Tray | - | Chassis Mount | - | 175°C (TJ) |
| onsemi | IGBT MODULE | Bulk | - | - | - | - | |
| onsemi | IGBT MODULE | Bulk | - | - | - | - | |
| onsemi | SI/SIC HYBRID MODULES, 3 CHANNEL | Bulk | 56-PIM (93x47) | Chassis Mount | EliteSiC ™ | -40°C ~ 175°C (TJ) | |
 SNXH75M65L3F2STG $56.68 | onsemi | IGBT MODULE FULL 650V 75A 32PIM | Tray | 32-PIM (56.7x42.5) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
 SNXH800H120L7QDSG $164.69 | onsemi | QDUAL3 1200 V 800 A HALF BRIDGE | Bulk | 11-PIM (152x62.15) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
SNXH80T120L2Q0P2G $47.90 | onsemi | IC MODULE PIM 1200V 80A | Tray,Tray | 20-PIM/Q0PACK (55x32.5) | Chassis Mount | - | 175°C (TJ) |
