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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT 1200V 16A IPAKTubeIPAK (TO-251)Through Hole--55°C ~ 150°C (TJ)
STMicroelectronicsIGBT TRENCH FS 600V 8A DPAKTape & Reel (TR),Cut Tape (CT)DPAK (TO-252) type C2Surface MountH-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 8A DPAKTape & Reel (TR),Cut Tape (CT)DPAKSurface MountM-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 600V 10A DPAKTape & Reel (TR),Cut Tape (CT)DPAKSurface Mount--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT 1200V 10A TO-251TubeTO-251 (IPAK)Through HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT 1200V 10A DPAKTape & Reel (TR),Cut Tape (CT)DPAKSurface MountPowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 12A DPAKTape & Reel (TR),Cut Tape (CT)DPAKSurface MountM-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT 600V 15A TO-251TubeTO-251 (IPAK)Through HolePowerMESH™-55°C ~ 150°C (TJ)
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