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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() STGD3NC120H-1 $0.48 | STMicroelectronics | IGBT 1200V 16A IPAK | Tube | IPAK (TO-251) | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() STGD4H60DF $1.20 | STMicroelectronics | IGBT TRENCH FS 600V 8A DPAK | Tape & Reel (TR),Cut Tape (CT) | DPAK (TO-252) type C2 | Surface Mount | H | -55°C ~ 175°C (TJ) |
![]() STGD4M65DF2 $1.45 | STMicroelectronics | IGBT TRENCH FS 650V 8A DPAK | Tape & Reel (TR),Cut Tape (CT) | DPAK | Surface Mount | M | -55°C ~ 175°C (TJ) |
![]() STGD5H60DF $1.28 | STMicroelectronics | IGBT TRENCH FS 600V 10A DPAK | Tape & Reel (TR),Cut Tape (CT) | DPAK | Surface Mount | - | -55°C ~ 175°C (TJ) |
![]() STGD5NB120SZ-1 $0.60 | STMicroelectronics | IGBT 1200V 10A TO-251 | Tube | TO-251 (IPAK) | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGD5NB120SZT4 $2.13 | STMicroelectronics | IGBT 1200V 10A DPAK | Tape & Reel (TR),Cut Tape (CT) | DPAK | Surface Mount | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGD6M65DF2 $1.45 | STMicroelectronics | IGBT TRENCH FS 650V 12A DPAK | Tape & Reel (TR),Cut Tape (CT) | DPAK | Surface Mount | M | -55°C ~ 175°C (TJ) |
![]() STGD6NC60H-1 $1.55 | STMicroelectronics | IGBT 600V 15A TO-251 | Tube | TO-251 (IPAK) | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |