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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() STGF15H60DF $2.01 | STMicroelectronics | IGBT TRENCH FS 600V 30A TO-220FP | Tube | TO-220FP | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGF15M65DF2 $1.88 | STMicroelectronics | IGBT TRENCH FS 650V 30A TO-220FP | Tube | TO-220FP | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGF17NC60SD $2.77 | STMicroelectronics | IGBT 600V 17A TO-220FP | Tube | TO-220FP | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGF19NC60HD $0.96 | STMicroelectronics | IGBT 600V 16A TO-220FP | Tube | TO-220FP | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGF19NC60KD $2.89 | STMicroelectronics | IGBT 600V 16A TO-220FP | Tube | TO-220FP | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGF19NC60WD $2.54 | STMicroelectronics | IGBT 600V 14A TO-220FP | Tube | TO-220FP | Through Hole | PowerMESH™ | -55°C ~ 150°C (TJ) |
![]() STGF20H60DF $2.61 | STMicroelectronics | IGBT TRENCH FS 600V 40A TO-220FP | Tube | TO-220FP | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() STGF20H65DFB2 $2.16 | STMicroelectronics | IGBT TRENCH FS 650V 40A TO-220FP | Tube | TO-220FP | Through Hole | HB2 | -55°C ~ 175°C (TJ) |

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