2SC2229-O(MIT1F,M)

Description：TRANS NPN 150V 0.05A TO-92MOD
Series：-

SKU:3fdc9503bbf5 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC2229-O(MIT1F,M) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 150V 0.05A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2229-O(MIT1F,M)

Description：TRANS NPN 150V 0.05A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 5V
Power - Max：800 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC2229-O(MIT1F,M)

2SC2229-O(MIT1F,M)

Single Bipolar Transistors Overview

The Toshiba 2SC2229 is a silicon NPN triple diffused transistor manufactured using the PCT process. It features a collector-emitter breakdown voltage of 150 V and a maximum collector current of 50 mA. The device exhibits a typical transition frequency of 120 MHz and a maximum collector output capacitance of 5.0 pF. DC current gain ranges from 70 to 240 depending on classification, with saturation voltages of 0.5 V at 10 mA collector current. Power dissipation reaches 800 mW, and it operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

High breakdown voltage capability for high-voltage switching applications
Low output capacitance suitable for video output circuits
High transition frequency supporting driver stage functions

Single Bipolar Transistors Applications

Black and White TV Video Output Applications
High-Voltage Switching Applications
Driver Stage Audio Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba channels as markings indicate potential variations. Confirm hFE binning requirements (O or Y) match circuit design needs. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines under heavy loads. Ensure application designs account for absolute maximum ratings to maintain long-term reliability.

Single Bipolar Transistors Selection Notes

Select this component for general electronics applications requiring high voltage handling in small signal contexts. Verify that the TO-92MOD package fits the thermal and spatial constraints of the target design. Consider the specific hFE classification required by the amplifier or switch topology. Evaluate safe operating area curves against expected load conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2229 series of NPN transistors produced via the PCT process. It is designed for use in consumer electronics such as black and white televisions and audio equipment. The device provides a balance of high voltage tolerance and moderate speed characteristics suitable for driver stages.

Single Bipolar Transistors Replacement Considerations

Check datasheets for alternative NPN transistors offering similar VCEO and IC ratings. Verify pinout compatibility if substituting directly into existing PCB layouts. Compare transition frequencies and output capacitance values to ensure signal integrity is maintained in high-frequency applications.