2SC2229-Y(SHP,F,M)

Single Bipolar Transistors Overview

The Toshiba 2SC2229-Y(SHP,F,M) is a silicon NPN triple diffused transistor utilizing the PCT process. It features a collector-emitter breakdown voltage of 150 V and a maximum collector current of 50 mA. The device exhibits a typical transition frequency of 120 MHz and a maximum collector output capacitance of 5.0 pF. DC current gain ranges from 70 to 240 depending on classification, with a minimum of 70 at 10 mA and 5 V. Maximum power dissipation is 800 mW, and it operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability for high-voltage switching applications
• Low output capacitance suitable for video output stages
• High transition frequency supporting driver stage requirements

Single Bipolar Transistors Applications

• Black and White TV Video Output Applications
• High-Voltage Switching Applications
• Driver Stage Audio Amplifier Applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor and Storage documentation to confirm environmental compliance status and binning classifications. Confirm package type JEDEC TO-92MOD matches design requirements. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing component selection.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring high voltage handling in small signal applications. Ensure operating conditions remain within absolute maximum ratings to maintain reliability. Consider the hFE classification 'Y' for higher gain requirements. Verify thermal management capabilities given the 800 mW power dissipation limit in the TO-92MOD package.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2229 series of NPN transistors manufactured by Toshiba Semiconductor and Storage. It is designed using the PCT (Triple Diffused Type) process technology. The component is housed in a JEITA standard TO-92MOD package, weighing approximately 0.36 g. It serves as a general-purpose discrete semiconductor device for electronics applications.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as VCEO, IC, and package type.