A2T21H360-24SR6

RF FETs, MOSFETs Overview

The A2T21H360-24SR6 is a 63 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications in the 2110 to 2170 MHz frequency range. It operates at a drain voltage of 28 Vdc with a maximum rating of 65 Vdc. The device features an NI-1230S-4L2L package and includes internal matching on both input and output sides. Typical single-carrier W-CDMA performance at 2140 MHz yields 16.2 dB gain, 51.8% drain efficiency, and -28.8 dBc ACPR.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty architecture
• Greater negative gate-source voltage range for improved Class C operation
• Designed for digital predistortion error correction systems
• Internally matched on both input and output ports

RF FETs, MOSFETs Applications

• Cellular base station amplifiers
• Asymmetrical Doherty power amplifier designs
• Digital predistortion linearization systems

RF FETs, MOSFETs Procurement Notes

Verify the specific R6 suffix indicates a reel quantity of 150 units on a 56 mm tape width with a 13-inch reel diameter. Confirm that the component is sourced from NXP Semiconductors or its authorized distribution channels to ensure authenticity. Check for RoHS compliance status as specified in the official documentation before procurement.

RF FETs, MOSFETs Selection Notes

Select this component for wideband cellular applications requiring high linearity and efficiency within the 2110–2170 MHz band. Ensure the design supports the required negative gate-source bias for optimal Class C peaking stage operation. Verify thermal management capabilities to maintain junction temperatures within the specified operating range during continuous wave operation.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistor series manufactured by Freescale Semiconductor, now NXP Semiconductors. It utilizes silicon lateral MOSFET technology optimized for high-power RF applications. The device is housed in a surface-mount NI-1230S-4L2L package suitable for automated assembly processes.

RF FETs, MOSFETs Replacement Considerations

Consult the official datasheet for direct substitute part numbers. Evaluate alternative devices based on identical pin configurations, package dimensions, and electrical characteristics such as drain-source voltage ratings and thermal resistance values.

RF FETs, MOSFETs FAQ

What is the typical drain efficiency at 2140 MHz?

The typical drain efficiency is 51.8% under single-carrier W-CDMA conditions with 63 W average output power.

Does the device require external matching networks?

No, the device is internally matched on both the input and output sides, simplifying the circuit design.

What is the maximum operating junction temperature?

The maximum operating junction temperature range extends up to +225 °C.