A3I25X050NR1

RF FETs, MOSFETs Overview

The A3I25X050NR1 is an Airfast RF LDMOS integrated power amplifier designed for operation from 2300 to 2700 MHz. It features a multi-stage Doherty circuit with on-chip matching, supporting 20 to 32 Vdc drain voltage. Typical performance at 28 Vdc includes 5.6 W average output power with 39.5% PAE and -35.6 dBc ACPR, or 8.7 W average output power with 44.8% PAE and -31.9 dBc ACPR at 2590 MHz using single-carrier W-CDMA signals.

RF FETs, MOSFETs Feature Summary

• Integrated Doherty splitter and combiner architecture
• On-chip matching providing 50 ohm input and DC blocking
• Integrated quiescent current temperature compensation with enable/disable function

RF FETs, MOSFETs Applications

• Cellular base station modulation formats
• Single-carrier W-CDMA amplification
• Broadband RF infrastructure applications

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. The R1 suffix indicates tape and reel packaging with defined unit counts and tape width. Confirm RoHS compliance status and ensure compatibility with required thermal management solutions for the specified operating junction temperature range.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring integrated Doherty functionality within the 2300–2700 MHz band. Ensure the application supports the required gate bias voltages for carrier and peaking stages. Validate thermal resistance characteristics against system heat dissipation capabilities. Verify that the input signal parameters align with the characterization test conditions for optimal linearity and efficiency.

RF FETs, MOSFETs Part Context

This device belongs to NXP's Airfast RF LDMOS integrated power amplifier family. It utilizes advanced laterally diffused MOS technology to combine high power density with integrated matching networks. The design targets modern cellular base stations requiring efficient amplification of complex modulation schemes across wide frequency bands.

RF FETs, MOSFETs Replacement Considerations

Consult official NXP documentation for verified substitute part numbers. Cross-referencing requires matching electrical specifications, pin configurations, and thermal characteristics. Do not assume interchangeability without validating functional equivalence through manufacturer-approved resources.

RF FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +225 °C.

How is the exposed backside of the package connected?

The exposed backside of the package serves as the source terminal for the transistor.

What ESD protection class does the device meet?

The device meets Human Body Model Class 1C and Charge Device Model Class C3 per specified testing methodologies.