AFT27S006N-1000M

RF FETs, MOSFETs Overview

The AFT27S006N-1000M is an N-Channel enhancement-mode lateral MOSFET RF power LDMOS transistor designed for cellular base station applications. It operates across a frequency range of 728 to 3700 MHz with a drain-source voltage rating of 65 Vdc and a maximum operating voltage of 32 Vdc. The device delivers an average output power of 28.8 dBm at 28 Vdc bias. It utilizes the PLD-1.5W plastic package, supports surface mount installation, and functions within a case temperature range of -40°C to +150°C.

RF FETs, MOSFETs Feature Summary

• Designed for digital predistortion error correction systems
• Features a greater negative gate-source voltage range for improved Class C operation
• Functions as a universal broadband driver

RF FETs, MOSFETs Applications

• Cellular base station amplifiers
• Broadband radio infrastructure
• Digital predistortion linearization circuits

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm current manufacturing status and availability through authorized distributors or direct manufacturer channels. Ensure compliance with RoHS standards and check for any end-of-life notifications prior to finalizing procurement plans.

RF FETs, MOSFETs Selection Notes

Select this component for wideband cellular infrastructure requiring high linearity and efficiency. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the design accommodates the required gate-source voltage ranges and matches the impedance characteristics provided in the load pull data tables.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistor family from NXP Semiconductors. It represents a silicon-based solution optimized for high-power radio frequency applications. The device integrates advanced lateral diffusion metal oxide semiconductor technology to deliver robust performance in demanding wireless communication environments.

RF FETs, MOSFETs Replacement Considerations

Consult official NXP documentation for verified substitute part numbers. Cross-reference pin configurations, electrical ratings, and thermal characteristics before implementation.