AIKQB160N75CP2ALSA1

Single IGBTs Overview

The AIKQB160N75CP2ALSA1 is a short-circuit rugged 750 V EDT2 IGBT in a reflow-solderable package, co-packed with a soft and fast recovery diode. It features a collector-emitter voltage of 750 V and a DC collector current of 160 A at Tc = 100°C. The typical collector-emitter saturation voltage is 1.4 V at ICnom = 160 A and 25°C. Short circuit robustness is rated at 5 µs at VCE = 470 V and VGE = 15 V. The device utilizes the TO247PLUS package with a high creepage distance of 6.6 mm.

Single IGBTs Feature Summary

• EDT2 technology providing smooth switching characteristics and low gate charge for simple drive design.
• Reflow-solderable capability enabling up to 40% less system thermal resistance compared to traditional mounting methods.
• Co-packaged with Emcon3 emitter controlled diode offering fast soft recovery properties.
• Positive thermal coefficient and tight parameter distribution ensuring excellent current sharing in parallel operation.

Single IGBTs Applications

• xEV traction inverter
• DC-link discharge switch
• Automotive auxiliary drives

Single IGBTs Procurement Notes

Verify the specific ordering suffix ALSA1 against official Infineon documentation to confirm exact packaging and reel specifications. Ensure compliance with automotive qualification standards such as AEC-Q101 before integration into production designs. Confirm that the reflow soldering profile aligns with JEDEC J-STD-020 MSL2 requirements for proper assembly.

Single IGBTs Selection Notes

Select this component for applications requiring high power density and robust short-circuit withstand capabilities in 400 V or 470 V DC systems. The device serves as a drop-in replacement for existing 160 A devices operating at Tc = 100°C. Consider its reflow compatibility if reducing system thermal resistance and increasing power output are primary design objectives.

Single IGBTs Part Context

This part belongs to Infineon's automotive-grade EDT2 IGBT portfolio designed specifically for hybrid and electric vehicle traction inverters. It represents an evolution in discrete power modules by integrating advanced silicon technology with a package optimized for automated surface mount assembly processes.

Single IGBTs Replacement Considerations

The datasheet identifies this device as a drop-in replacement for other 160 A IGBTs rated at Tc = 100°C. Verify pinout compatibility and thermal interface dimensions when substituting legacy components. No direct cross-reference part numbers are provided in the source material.