FET, MOSFET Arrays ALD210800ASCL product image

ALD210800ASCL

$8.71
  • Description:MOSFET 4N-CH 10.6V 0.08A 16SOIC
  • Series:EPAD®, Zero Threshold™

SKU:7b87d3af35c9 Category: Brand:

  
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ALD210800ASCL is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Advanced Linear Devices Inc.. Its product description is MOSFET 4N-CH 10.6V 0.08A 16SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for ALD210800ASCL

  • Description:MOSFET 4N-CH 10.6V 0.08A 16SOIC
  • Series:EPAD®, Zero Threshold™
  • Mfr:Advanced Linear Devices Inc.
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel, Matched Pair
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):10.6V
  • Current - Continuous Drain (Id) @ 25°C:80mA
  • Rds On (Max) @ Id, Vgs:25Ohm
  • Vgs(th) (Max) @ Id:10mV @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:15pF @ 5V
  • Power - Max:500mW
  • Operating Temperature:0°C ~ 70°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:16-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for ALD210800ASCL

ALD210800ASCL

FET, MOSFET Arrays Overview

The ALD210800ASCL is a precision N-Channel EPAD® MOSFET array featuring four matched pairs in a 16-SOIC package. It utilizes Zero-Threshold™ technology with a Gate Threshold Voltage (VGS(th)) of 0.00V ±0.01V at IDS = 10µA and VDS = 0.1V. The device supports an operating current range of 100,000,000:1 and delivers an output current exceeding 50mA. Key electrical parameters include a Drain Source On Resistance (RDS(ON)) of 25Ω at VGS = 5.0V and 10kΩ at VGS = 0.0V. Maximum ratings are 10.0V for Drain-Source voltage, 10.0V for Gate-Source voltage, and 80mA for Operating Current.

FET, MOSFET Arrays Feature Summary

  • Zero-Threshold™ Gate Threshold Voltage set precisely at 0.00V for ultra-low voltage operation
  • Precision matched pairs with offset voltage as low as 2mV and excellent temperature tracking
  • High transconductance and output conductance optimized for very low supply voltages
  • Wide dynamic operating current range spanning eight orders of magnitude

FET, MOSFET Arrays Applications

  • Low overhead current mirrors and precision current sources
  • Extremely low level voltage-clamps and zero-crossing detectors
  • Nanopower normally-on circuits and energy harvesting detectors
  • High gain differential amplifier input stages
  • Multiple channel sample-and-hold switches and discrete analog multiplexers

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix to confirm the package type and lead-free status. The 'SCL' suffix indicates a 16-Pin SOIC package with lead-free (RoHS) compliance. Confirm the operating temperature range requirements against the standard commercial grade specifications provided in the datasheet before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component when circuit designs require precise matching between multiple MOSFETs on a single monolithic chip. It is suitable for applications demanding sub-threshold operation or extremely low supply voltages where traditional MOSFETs fail. Ensure the design accounts for the internal connection of IC pins to the V- supply rail during power sequencing.

FET, MOSFET Arrays Part Context

This device belongs to the ALD2108xx/ALD2129xx/ALD2148xx/ALD2169xx EPAD® MOSFET Array family. It is an enhanced version of the ALD1108xx series, offering increased forward transconductance and output conductance. The ALD210800 specifically represents the Zero-Threshold™ category within this product line.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

ALD210800ASCLALD210800ASCL
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