APT24M80B

$8.23

Description：MOSFET N-CH 800V 25A TO247
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube

SKU:d866f907f350 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT24M80B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 800V 25A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT24M80B

Description：MOSFET N-CH 800V 25A TO247
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：390mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：150 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：4595 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：625W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247 [B]
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT24M80B

APT24M80B

Single FETs, MOSFETs Overview

The APT24M80B is an N-channel silicon MOSFET manufactured by Microchip Technology, housed in a TO-247-3 through-hole package. It features a drain-source breakdown voltage (VDS) of 800 V and a continuous drain current (ID) of 25 A at case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 310 mΩ with a gate-source threshold voltage of 3 V. It supports a gate-source voltage range of ±30 V and has a total gate charge of 150 nC. The component operates within a temperature range of -55 °C to +150 °C, with a power dissipation rating of 625 W.

Single FETs, MOSFETs Feature Summary

High-voltage capability with 800 V drain-source breakdown for robust switching applications
Enhancement mode N-channel construction utilizing silicon technology
Through-hole mounting design compatible with standard PCB layouts

Single FETs, MOSFETs Applications

Industrial motor control systems
Power supply inverters
High-voltage switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Confirm that the TO-247-3 package dimensions match your thermal management and mechanical constraints. Ensure that the 800 V rating and 25 A current limits are sufficient for your specific circuit requirements under all operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high blocking voltage and moderate current handling are required in a through-hole form factor. Compare the 310 mΩ on-resistance against alternative devices to ensure acceptable conduction losses. Verify that the 150 nC gate charge aligns with your driver capabilities to maintain efficient switching speeds without excessive drive power.

Single FETs, MOSFETs Part Context

This part belongs to the discrete power MOSFET category from Microchip Technology. It is designed for general-purpose high-voltage switching tasks. The TO-247-3 package provides a balance between electrical performance and ease of integration into traditional printed circuit board assemblies compared to surface-mount alternatives.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip documentation for verified cross-reference part numbers. Do not substitute with generic equivalents without confirming matching electrical parameters and pinout configurations.