APTM120U10SCAVG

$253.49

Description：MOSFET N-CH 1200V 116A SP6
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Bulk

SKU:f557cc4ccdbf Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APTM120U10SCAVG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 116A SP6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APTM120U10SCAVG

Description：MOSFET N-CH 1200V 116A SP6
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：116A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：120mOhm @ 58A, 10V
Vgs(th) (Max) @ Id：5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs：1100 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：28900 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3290W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SP6
Package / Case：SP6

Single FETs, MOSFETs datasheet and documents for APTM120U10SCAVG

APTM120U10SCAVG

Single FETs, MOSFETs Overview

The APTM120U10SCAVG is a silicon carbide (SiC) power module manufactured by Microchip Technology. It integrates an N-channel MOSFET with parallel SiC diodes in a single switch configuration. The device features a 1200V blocking voltage and supports a continuous drain current of 116A at case temperature. Key electrical parameters include a maximum pulsed drain current of 464A, an on-state resistance of 0.12Ω, and a power dissipation rating of 3290W. The module utilizes POWER MOS 7® technology and is housed in an SP6 chassis mount package with screw electrical mounting.

Single FETs, MOSFETs Feature Summary

Integrates N-channel MOSFET with parallel SiC diodes for single switch operation
Utilizes Silicon Carbide (SiC) technology for high-temperature performance
Designed for chassis mounting via screw terminals

Single FETs, MOSFETs Applications

Power electronics systems
Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version and product change notifications before procurement. Confirm that the SP6 package dimensions and thermal interface requirements match the target heatsink design. Ensure the ordering suffix matches the required pinout and terminal configuration. Check for any end-of-life notices or discontinuance notifications associated with this part number to ensure long-term supply availability.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage switching with low conduction losses. The integrated SiC diode reduces reverse recovery losses compared to standard silicon solutions. Consider the 0.12Ω on-resistance for efficiency calculations under load. Verify that the 116A continuous current rating meets the system's thermal management capabilities. The SP6 package requires appropriate chassis mounting infrastructure.

Single FETs, MOSFETs Part Context

This module belongs to Microchip's discrete semiconductor module portfolio, specifically designed for high-power density applications. It combines advanced SiC diode technology with robust MOSFET switching capabilities. The SP6 packaging format is intended for industrial and automotive-grade power conversion systems where reliability and thermal performance are critical.