AUIRFB4410

Single FETs, MOSFETs Overview

The AUIRFB4410 is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a TO-220AB through-hole package and utilizes advanced process technology to achieve ultra-low on-resistance. The device supports a maximum drain-to-source voltage of 100 V and offers continuous drain currents up to 88 A (silicon limited) or 75 A (package limited). Key electrical parameters include a typical RDS(on) of 8.0 mΩ, a total gate charge of 120 nC, and a junction temperature range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for high reliability in vehicle applications
• Advanced processing enables extremely low on-resistance per silicon area
• Supports repetitive avalanche operation up to the maximum junction temperature
• Features fast switching speeds and dynamic dV/dt rating

Single FETs, MOSFETs Applications

• Automotive power management systems
• Motor control circuits
• High-efficiency DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official Infineon documentation before integration. Confirm that the specific revision matches the required automotive qualification level. Ensure thermal management designs account for the specified junction-to-case resistance values under actual operating conditions. Cross-reference ordering suffixes with manufacturer guidelines to ensure correct packaging and traceability.

Single FETs, MOSFETs Selection Notes

Select this component when designing for automotive environments requiring robust performance at elevated temperatures. Consider the trade-off between the silicon-limited and package-limited current ratings based on the cooling strategy. Evaluate the gate charge requirements against the driver capabilities to optimize switching losses. Verify that the application does not exceed the single-pulse avalanche energy limits defined in the datasheet.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, specifically tailored for the automotive sector as indicated by the AU prefix. It represents a design optimized for efficiency and durability in harsh electrical environments. The TO-220AB package provides a balance of thermal performance and mechanical mounting flexibility for industrial and automotive chassis installations.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Ensure any replacement maintains AEC-Q101 compliance if used in automotive contexts. Verify pinout compatibility and thermal resistance characteristics to avoid redesigning heat sinks or PCB layouts.

Single FETs, MOSFETs FAQ

Is the AUIRFB4410 suitable for use in unclamped inductive switching scenarios?

Yes, the datasheet confirms that repetitive avalanche operation is allowed up to the maximum junction temperature, provided the avalanche current and energy limits are not exceeded.

What determines the maximum continuous drain current for this device?

The maximum continuous drain current is limited by either the silicon die capability (88 A) or the package thermal constraints (75 A), depending on the case temperature and cooling conditions.