FQP24N08

Description：MOSFET N-CH 80V 24A TO220-3
Series：QFET®
Mfr：onsemi
Package：Tube

SKU:1fecaa225603 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FQP24N08 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 80V 24A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQP24N08

Description：MOSFET N-CH 80V 24A TO220-3
Series：QFET®
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：60mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for FQP24N08

FQP24N08

Single FETs, MOSFETs Overview

The FQP24N08 is an N-Channel enhancement mode power MOSFET manufactured by onsemi using proprietary planar stripe and DMOS technology. It features a drain-source voltage of 80 V, a continuous drain current of 24 A at case temperature, and a maximum on-state resistance of 60 mΩ. The device operates with a gate-source voltage range of ±25 V and has a total gate charge of 25 nC. Thermal performance includes a power dissipation rating of 75 W at case temperature. Switching characteristics specify a rise time of 105 ns and a fall time of 35 ns, with a minimum forward transconductance of 12 S.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary planar stripe and DMOS technology to reduce on-resistance and enhance switching performance.
Provides high avalanche energy strength for robust operation in demanding environments.
Designed for through-hole mounting in standard TO-220AB packages.

Single FETs, MOSFETs Applications

Inverting regulator circuits including buck and boost topologies
General-purpose power switching applications
DC-DC converter designs

Single FETs, MOSFETs Procurement Notes

Verify component status carefully as the FQP24N08 is scheduled for obsolescence and will be discontinued by the manufacturer. Confirm availability of alternative sources or substitute parts before finalizing procurement plans. Ensure all ordering documentation references the correct package type and suffix codes if applicable. Request updated datasheets to confirm final electrical specifications prior to integration into new designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 80 V blocking capability and moderate current handling up to 24 A. The low on-resistance supports efficient power conversion with reduced conduction losses. Consider the thermal management requirements associated with the TO-220AB package and 75 W dissipation rating. Evaluate switching speeds against electromagnetic interference constraints in high-frequency designs.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's single N-Channel MOSFET portfolio, leveraging advanced DMOS processes for improved efficiency. It serves as a discrete power solution within broader power management systems. The technology focuses on balancing conduction losses with switching performance for cost-effective power electronics implementations.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible alternatives due to discontinuation status. Verify pinout compatibility and electrical parameter equivalence for direct replacements.