FQPF1P50

Description：MOSFET P-CH 500V 1.03A TO220F
Series：QFET®
Mfr：onsemi
Package：Tube

SKU:df921970022d Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

FQPF1P50 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 500V 1.03A TO220F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQPF1P50

Description：MOSFET P-CH 500V 1.03A TO220F
Series：QFET®
Mfr：onsemi
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：1.03A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10.5Ohm @ 515mA, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：28W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F-3
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for FQPF1P50

FQPF1P50

Single FETs, MOSFETs Overview

The FQPF1P50 is a P-Channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features a -500V drain-source voltage and a continuous drain current of -1.03A at 25°C case temperature. The device exhibits a maximum on-resistance of 10.5Ω at VGS = -10V. Key electrical parameters include a typical gate charge of 11nC, a peak diode recovery dv/dt of -4.5V/ns, and a single pulsed avalanche energy rating of 110mJ. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
Capable of withstanding high energy pulses in avalanche and commutation modes.
Features improved dv/dt capability and fast switching characteristics.

Single FETs, MOSFETs Applications

Electronic lamp ballasts based on complementary half bridge topology

Single FETs, MOSFETs Procurement Notes

Verify the component status carefully as this part number may be discontinued or obsolete. Confirm that the manufacturer documentation aligns with the specific revision required for your design. Ensure compatibility with existing thermal management solutions given the TO-220F package constraints. Review all absolute maximum ratings against your operational limits before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage P-Channel switching with moderate current capabilities. The TO-220F package suits through-hole mounting requirements. Evaluate the thermal resistance values to ensure adequate heat dissipation under continuous load conditions. Consider the gate charge specifications when designing the driving circuitry for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This device belongs to the QFET series produced by Fairchild Semiconductor International, now part of onsemi. The product utilizes advanced planar stripe DMOS technology tailored for low on-resistance and robust switching performance. It is designed to handle high energy pulses effectively in various power switching applications.