IRF1405SPBF

Description：MOSFET N-CH 55V 131A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:08071eda324b Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRF1405SPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 131A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF1405SPBF

Description：MOSFET N-CH 55V 131A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：131A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5.3mOhm @ 101A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：260 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5480 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：200W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF1405SPBF

IRF1405SPBF

Single FETs, MOSFETs Overview

The IRF1405SPBF is an N-channel HEXFET power MOSFET in a D2PAK (TO-263) surface-mount package. It features a 55V drain-source breakdown voltage and a maximum continuous drain current of 131A at 25°C case temperature. The device exhibits an ultra-low on-resistance of 5.3mΩ at VGS=10V. Key electrical parameters include a total gate charge of 170nC, a single-pulse avalanche energy rating of 590mJ, and a peak diode recovery dv/dt of 5.0V/ns. It supports junction temperatures up to 175°C.

Single FETs, MOSFETs Feature Summary

Advanced planar stripe technology for extremely low on-resistance per silicon area
Fast switching speed combined with improved repetitive avalanche rating
Dynamic dv/dt rating capability for robust performance during body diode recovery
Operational reliability up to a 175°C maximum junction temperature

Single FETs, MOSFETs Applications

Industrial motor drive systems
DC-DC converters
Synchronous rectification circuits
Low stray inductance applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'SPBF' corresponds to the lead-free D2PAK variant when sourcing. Confirm that the intended application environment remains within the specified industrial market qualification standards. Ensure thermal management designs account for the junction-to-case thermal resistance limits provided in the datasheet to maintain safe operating temperatures under load conditions.

Single FETs, MOSFETs Selection Notes

Select this component for high-current switching applications requiring low conduction losses and fast dynamic response. The D2PAK package offers a balance between thermal dissipation capabilities and surface-mount convenience. Consider the 5.3mΩ on-resistance for efficiency optimization in low-voltage, high-amperage power stages where heat generation must be minimized.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes advanced processing techniques to achieve superior performance metrics compared to standard MOSFETs. The product line is designed for industrial markets, emphasizing reliability and efficiency in power conversion and control applications.