IRFBF30

Description：MOSFET N-CH 900V 3.6A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:2a312969dbc9 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFBF30 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 900V 3.6A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFBF30

Description：MOSFET N-CH 900V 3.6A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.7Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：78 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRFBF30

IRFBF30

Single FETs, MOSFETs Overview

The Vishay Siliconix IRFBF30 is a third-generation N-channel power MOSFET housed in a TO-220AB package. It features a drain-source voltage (VDS) of 900 V and a maximum continuous drain current (ID) of 3.6 A at 25 °C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 3.7 Ω at VGS = 10 V. Key electrical parameters include a total gate charge (Qg) of 78 nC, a repetitive avalanche energy rating of 250 mJ, and a peak diode recovery dV/dt capability of 1.5 V/ns. Maximum power dissipation is rated at 125 W.

Single FETs, MOSFETs Feature Summary

Third-generation TrenchFET technology providing optimized switching performance and ruggedized design
Repetitive avalanche rated for enhanced robustness in inductive load applications
High peak diode recovery dV/dt rating suitable for hard-switching scenarios
Designed for ease of paralleling and simple drive requirements

Single FETs, MOSFETs Applications

High-voltage DC-DC converters
Motor control circuits
Power factor correction (PFC) stages
Unclamped inductive switching loads

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm compliance status. The standard part number indicates lead-free terminations, while the -BE3 suffix denotes both lead-free and halogen-free construction. Confirm that the required package variant matches the TO-220AB specification provided in the datasheet before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation is required alongside moderate current handling capabilities. The 900 V rating supports high-side switching in industrial power supplies. Evaluate thermal management requirements carefully, as the RDS(on) value results in significant conduction losses compared to lower-voltage counterparts. Ensure gate drive voltages remain within the specified ±20 V limit.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix IRFBF series of high-voltage power MOSFETs. It utilizes third-generation TrenchFET process technology to balance low on-resistance with fast switching speeds. The TO-220AB package provides a cost-effective solution for commercial and industrial applications requiring power dissipation levels up to approximately 50 W.