IRFR3910TRPBF

$0.89

Description：MOSFET N-CH 100V 16A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f99d0d2079fb Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFR3910TRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 16A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR3910TRPBF

Description：MOSFET N-CH 100V 16A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：115mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：640 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：79W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR3910TRPBF

IRFR3910TRPBF

Single FETs, MOSFETs Overview

The IRFR3910TRPBF is an N-channel enhancement mode power MOSFET from the Infineon HEXFET series, housed in a surface-mount DPAK (TO-252) package. It features a maximum drain-source voltage of 100 V and a continuous drain current of 16 A at 25°C. The device exhibits a typical on-resistance of 115 mΩ at 10 V gate drive and a maximum junction temperature rating of 175°C. Key electrical parameters include a gate threshold voltage range of 2 V to 4 V, a maximum gate-source voltage of ±20 V, and a typical total gate charge of 29.3 nC at 10 V.

Single FETs, MOSFETs Feature Summary

Utilizes advanced silicon processes for high-performance switching capabilities
Designed with industry-standard footprints for ease of design integration
Capable of handling significant avalanche energy stress

Single FETs, MOSFETs Applications

DC motor control circuits
Inverter systems
Switching mode power supplies (SMPS)
Lighting applications
Load switch implementations

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix TRPBF confirms tape-and-reel packaging when ordering. Confirm RoHS compliance status matches project requirements. Ensure the DPAK footprint aligns with PCB layout specifications. Cross-reference datasheet revisions to validate parameter consistency against existing designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust 100V blocking capability and moderate current handling up to 16A. Consider the 115mΩ on-resistance for conduction loss calculations. Evaluate thermal management needs given the 175°C junction limit. Compare gate charge characteristics against driver capabilities for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family of power MOSFETs. These devices are engineered using proven silicon technologies to provide designers with a broad portfolio. The family supports various power switching applications through standardized packages like TO-252 and TO-251.