IRFS11N50ATRLP

$3.34

Description：MOSFET N-CH 500V 11A TO263AB
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c5653c5c0b1d Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRFS11N50ATRLP is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 11A TO263AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFS11N50ATRLP

Description：MOSFET N-CH 500V 11A TO263AB
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：520mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1423 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：170W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263AB
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRFS11N50ATRLP

IRFS11N50ATRLP

Single FETs, MOSFETs Overview

The IRFS11N50ATRLP is a Vishay Siliconix N-Channel Power MOSFET in a D2PAK (TO-263) package. It features a 500 V drain-source voltage and an on-state resistance of 0.52 Ω at 10 V gate drive. The device supports an 11 A continuous drain current and handles a 44 A pulsed current. Key dynamic parameters include a total gate charge of 52 nC, input capacitance of 1423 pF, and output capacitance of 208 pF. Thermal characteristics specify a junction-to-case resistance of 0.75 °C/W and a maximum power dissipation of 170 W.

Single FETs, MOSFETs Feature Summary

Low gate charge for simplified driver requirements
Enhanced ruggedness against avalanche events and dynamic dV/dt stress
Fully characterized capacitance and avalanche energy ratings

Single FETs, MOSFETs Applications

Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
High Speed Power Switching
Two Transistor Forward Topologies
Half and Full Bridge Converters
Power Factor Correction Boost Circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm lead-free status and tape-and-reel packaging configuration. Confirm RoHS compliance details directly from the manufacturer's documentation. Validate that the component meets all required electrical specifications for your application before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring moderate current handling with efficient switching capabilities. The low gate charge facilitates easier driver design. Ensure adequate thermal management is provided to maintain junction temperatures within the specified operating range during operation.

Single FETs, MOSFETs Part Context

This part belongs to the IRFS series of high-voltage N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes silicon technology and is designed for robust performance in demanding power electronics environments. The D2PAK package provides effective thermal dissipation for surface-mount implementations.

Single FETs, MOSFETs Replacement Considerations

SiHFS11N50A is a lead-free variant of the same core device. Verify pinout compatibility and ensure replacement parts meet identical voltage, current, and thermal ratings.