Single FETs, MOSFETs IRFU9310 product image

IRFU9310

$1.28
  • Description:MOSFET P-CH 400V 1.8A TO251AA
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube

SKU:2580fee0121a Category: Brand:

  
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IRFU9310 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 400V 1.8A TO251AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFU9310

  • Description:MOSFET P-CH 400V 1.8A TO251AA
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tube
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):400 V
  • Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:7Ohm @ 1.1A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):50W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-251AA
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for IRFU9310

IRFU9310

Single FETs, MOSFETs Overview

The Vishay Siliconix IRFU9310 is a P-channel enhancement mode power MOSFET housed in an IPAK (TO-251) through-hole package. It features a -400 V drain-source voltage rating and supports a continuous drain current of -1.8 A at 25 °C case temperature, decreasing to -1.1 A at 100 °C. The device exhibits a maximum on-resistance of 7 Ω at VGS = -10 V and a total gate charge of 13 nC. It operates within a junction temperature range of -55 °C to +150 °C and includes avalanche energy ratings.

Single FETs, MOSFETs Feature Summary

  • Straight lead configuration designed for through-hole mounting applications
  • Fully rated for unclamped inductive switching events
  • Fast switching characteristics enabled by advanced process technology

Single FETs, MOSFETs Applications

  • High voltage DC-DC converter circuits
  • Motor control systems requiring P-channel switching
  • Power supply load switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm compliance with RoHS directives and halogen-free material requirements. Ensure the selected variant matches the required straight lead IPAK package style. Confirm that the manufacturer's datasheet specifications align with the intended thermal management strategy for the target application environment.

Single FETs, MOSFETs Selection Notes

Select this component when a ruggedized P-channel MOSFET with high voltage capability is required for through-hole assembly. Evaluate the thermal resistance parameters against the expected operating conditions to ensure adequate heat dissipation. Consider the avalanche energy rating if the circuit involves significant inductive loads or potential transient overvoltage scenarios.

Single FETs, MOSFETs Part Context

This device belongs to the third-generation power MOSFET family from Vishay Siliconix, which utilizes advanced processing techniques to achieve low on-resistance per silicon area. The product line includes surface-mount DPAK variants alongside the through-hole IPAK version, providing designers with flexible packaging options for various board layout requirements.

Single FETs, MOSFETs Replacement Considerations

The IRFR9310 serves as the direct surface-mount equivalent within the same electrical specification family. Designers transitioning between packages must account for differences in thermal resistance and physical footprint dimensions while maintaining identical electrical performance characteristics.

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