JAN2N1711

Single Bipolar Transistors Overview

The JAN2N1711 is an NPN silicon power bipolar junction transistor (BJT) manufactured by Microchip Technology. It is housed in a hermetic TO-5-3 metal can package designed for through-hole mounting. The device supports a maximum collector-base voltage of 75 V and a collector-emitter voltage of 50 V, with an emitter-base voltage rating of 7 V. It handles a continuous DC collector current of 500 mA and dissipates up to 800 mW of power. The component operates within a temperature range of -65°C to +200°C and features a DC current gain (hFE) ranging from 90 to 300.

Single Bipolar Transistors Feature Summary

• Hermetically sealed TO-5-3 metal can construction for environmental protection
• High thermal stability supporting operation up to +200°C
• Single NPN configuration optimized for power switching applications

Single Bipolar Transistors Applications

• Military and aerospace electronic systems requiring radiation-hardened or high-reliability components
• High-temperature industrial control circuits
• Power amplification stages in specialized communication equipment

Single Bipolar Transistors Procurement Notes

Verify the specific revision level and lot traceability when ordering, as military-grade parts often require strict adherence to quality standards. Confirm that the TO-5-3 package dimensions match your PCB footprint requirements. Ensure that the supplier provides necessary documentation regarding material composition and compliance with relevant defense or industrial specifications. Check for any recent product change notifications that might affect pinout or electrical characteristics.

Single Bipolar Transistors Selection Notes

Select this component when a hermetically sealed NPN transistor is required for high-temperature environments exceeding standard commercial limits. The 500 mA current capacity and 800 mW power dissipation make it suitable for moderate power switching tasks. Consider the TO-5-3 package constraints during mechanical design. Evaluate the hFE range of 90 to 300 to ensure compatibility with your circuit's base drive requirements.

Single Bipolar Transistors Part Context

The JAN2N1711 belongs to the family of military-grade silicon planar epitaxial transistors produced by Microchip Technology. These components are designed to meet stringent reliability standards for harsh environments. The JAN prefix typically indicates a military grade designation, distinguishing it from commercial variants. The TO-5-3 package is a standard form factor for hermetic semiconductor devices used in critical applications.

Single Bipolar Transistors Replacement Considerations

Consult official Microchip cross-reference guides for verified equivalent part numbers. Ensure any substitute maintains the same hermetic sealing, package type, and electrical ratings. Verify that alternative components meet the same temperature and reliability standards required for your application.