JANSR2N3637

Single Bipolar Transistors Overview

The JANSR2N3637 is a PNP silicon small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for through-hole mounting in a TO-39 metal can package. The device supports a maximum collector-emitter voltage of 175 V and a continuous collector current of 1 A. Power dissipation is rated at 1 W, with an operating temperature range spanning from -65°C to +200°C. It features a minimum DC current gain of 100 at 50 mA and 10 V, meeting military-grade reliability standards.

Single Bipolar Transistors Feature Summary

• Military-grade radiation-hardened design suitable for harsh environments
• High collector-emitter voltage rating of 175 V
• Wide thermal operating range extending to 200°C
• Through-hole TO-39 metal can packaging

Single Bipolar Transistors Applications

• Radiation-tolerant aerospace electronics
• Military defense systems
• High-voltage switching circuits
• Amplifier stages in extreme environments

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation against the manufacturer's datasheet to confirm radiation hardness level and qualification status. Ensure that the procurement channel provides traceability documentation required for military or aerospace applications. Confirm package integrity and pin configuration match the TO-39 specification before integration into circuit designs.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and radiation tolerance are critical requirements. The TO-39 package offers robust mechanical stability for through-hole assembly. Consider the 1 W power dissipation limit and thermal management needs for the intended application environment. Verify compatibility with existing circuit biasing conditions given the 175 V voltage rating.

Single Bipolar Transistors Part Context

This part belongs to the JAN series of qualified transistors produced by Microchip Technology. It serves as a specialized variant within the broader 2N3637 family, tailored for stringent military specifications. The component represents a legacy but reliable solution for high-reliability analog and switching applications where standard commercial parts are insufficient.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other radiation-hardened PNP transistors in TO-39 packages with comparable voltage and current ratings. Verify electrical parameters such as hFE and breakdown voltages against the original design requirements. Consult Microchip Technology for official cross-reference recommendations to ensure functional equivalence.