MA4PBL027

RF Diode Overview

The MA4PBL027 is a silicon beamlead PIN diode fabricated using the HMIC process, featuring a silicon pedestal embedded in low-loss glass. It exhibits ultra-low capacitance of 26 fF at -5V/10 GHz and forward resistance of 4 Ω at +20mA/10 GHz. The device supports a minority carrier lifetime of 110 ns and operates with a reverse voltage rating of 90 V. It handles 30 dBm RF CW incident power and dissipates 150 mW of combined RF and DC power. Operating temperature ranges from -55°C to +125°C.

RF Diode Feature Summary

• Silicon-glass construction eliminates wirebonds for rugged performance
• Ultra-low parasitic capacitance enables high-frequency operation up to 110 GHz
• Polymer and silicon nitride coatings provide scratch and impact protection
• Compatible with standard +5V TTL gate drivers for bias control

RF Diode Applications

• Microwave and millimeter wave switch designs requiring low insertion loss
• Radar system switching arrays
• High-speed electronic countermeasure (ECM) circuits
• Optical switching networks and wideband multi-throw switch assemblies

RF Diode Procurement Notes

Verify component status as the datasheet indicates preliminary or advanced development stages where volume production commitment may not be guaranteed. Confirm current engineering sample availability and check for recent product change notices regarding assembly sites or marking updates before finalizing procurement plans.

RF Diode Selection Notes

Select this component for applications demanding extremely fast switching speeds and minimal parasitic effects in the millimeter-wave spectrum. Ensure the design accommodates the specific beamlead attachment methods such as thermo-compression bonding or conductive silver epoxy, as standard surface mount techniques are not applicable.

RF Diode Part Context

This device belongs to the HMIC Silicon Beamlead PIN Diode V2 family from MACOM Technology Solutions. It utilizes hetero-junction technology to achieve lower series resistance compared to conventional GaAs devices, offering enhanced uniformity and extremely low parasitics for high-performance RF switching applications.

RF Diode Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.