Single Bipolar Transistors PHE13005,127 product image

PHE13005,127

$0.74
  • Description:TRANS NPN 400V 4A TO-220AB
  • Series:-

SKU:e68ddd3e54de Category: Brand:

  
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PHE13005,127 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists WeEn Semiconductors. Its product description is TRANS NPN 400V 4A TO-220AB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for PHE13005,127

  • Description:TRANS NPN 400V 4A TO-220AB
  • Series:-
  • Mfr:WeEn Semiconductors
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):400 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 1A, 4A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 2A, 5V
  • Power - Max:75 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for PHE13005,127

PHE13005,127

Single Bipolar Transistors Overview

The PHE13005,127 is a high voltage, high speed NPN planar-passivated power switching transistor manufactured by WeEn Semiconductors. It is housed in a SOT78 (TO-220) plastic package designed for through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 400 V and a collector-base voltage (VCBO) of 700 V. The device supports a maximum DC collector current (IC) of 4 A and a total power dissipation (Pd) of 75 W at 25°C. It features a minimum DC current gain (hFE) of 10 and a maximum transition frequency (ft) of 60 Hz. The maximum operating junction temperature is rated at 150°C.

Single Bipolar Transistors Feature Summary

  • High voltage capability with 400 V collector-emitter breakdown rating
  • High speed switching performance suitable for demanding electronic applications
  • Planar passivated construction for enhanced reliability and stability

Single Bipolar Transistors Applications

  • High frequency electronic lighting ballast circuits
  • Power supply unit designs
  • Industrial switching regulator applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix '127' to confirm the TO-220 package variant and horizontal rail pack configuration. Ensure compatibility with industrial qualification standards required for the target application. Cross-reference the 12NC code 934055423127 for accurate ordering. Confirm RoHS compliance and lead-free plating status if environmental regulations apply to the assembly process.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN power transistor with 400 V blocking capability is required for high-frequency operations. The 4 A continuous current rating and 75 W power dissipation make it suitable for medium-power switching tasks. Consider the TO-220 package for efficient heat sinking solutions in space-constrained industrial enclosures.

Single Bipolar Transistors Part Context

This part belongs to the PHE series of high-voltage NPN transistors from WeEn Semiconductors. The series is engineered for planar technology to ensure consistent switching characteristics. Similar parts in the lineup may offer different current ratings or package options, such as the PHD13005 which includes an integrated anti-parallel diode.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal resistance specifications before considering alternative manufacturers.

PHE13005,127PHE13005,127
$0.74
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