RF1S50N06LE

$1.11

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Harris Corporation
Package：Bulk

SKU:6302a6a224ec Category: Single FETs, MOSFETs Brand: Harris Corporation

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Product introduction

RF1S50N06LE is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RF1S50N06LE

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Harris Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for RF1S50N06LE

RF1S50N06LE

Single FETs, MOSFETs Overview

The RF1S50N06LESM is a single-element N-channel silicon power MOSFET manufactured by Harris Corporation. It features a TO-263AB (D2-Pak) package with the case connected to the drain. Key electrical parameters include a maximum drain-source breakdown voltage of 60V, a continuous drain current of 50A, and a maximum on-resistance of 0.022 ohms. The device operates in enhancement mode and is logic level compatible.

Single FETs, MOSFETs Feature Summary

Logic level compatible gate drive for simplified control interface
Integrated body diode configuration within a single element structure
Drain-connected case design for efficient thermal dissipation

Single FETs, MOSFETs Applications

DC-DC converter circuits requiring high current handling
Power switching applications utilizing logic-level inputs
General purpose power management systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against Harris Corporation specifications. Confirm package type matches TO-263AB requirements. Ensure logic level compatibility aligns with system drive voltages. Check for RoHS compliance status as indicated in official documentation. Validate drain connection orientation for proper circuit integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications demanding 60V blocking capability and 50A continuous current. The low on-resistance supports efficient power conversion. Logic level compatibility allows direct interfacing with standard digital controllers. Consider thermal management due to the TO-263AB package constraints.

Single FETs, MOSFETs Part Context

This part belongs to the RF1S series of power MOSFETs from Harris Corporation. It utilizes the MegaFET process technology. The series includes various voltage and current ratings optimized for power switching. The specific model provides a balance of current capacity and low conduction losses.