SIS862DN-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SiS862DN is a single N-Channel Power MOSFET utilizing TrenchFET technology, housed in a leadless PowerPAK 1212-8 surface-mount package. It features a 60 V drain-source voltage rating and supports continuous drain currents up to 40 A at case temperatures of 25 °C or 70 °C. The device offers low on-state resistance, specified as a maximum of 8.5 mΩ at VGS = 10 V with a 20 A load. It is designed for efficient switching with a typical total gate charge of 8.7 nC at VGS = 10 V.

Single FETs, MOSFETs Feature Summary

• TrenchFET power MOSFET architecture providing optimized on-resistance and switching performance
• Capable of operating with 5 V gate drive signals for enhanced logic compatibility
• 100% tested for avalanche ruggedness including both repetitive and non-repetitive unclamped inductive switching (UIS)
• Lead-free and halogen-free construction compliant with RoHS standards

Single FETs, MOSFETs Applications

• Primary side switch controllers
• Synchronous rectification circuits
• DC/DC converter topologies
• Boost converter designs
• DC/AC inverter systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure compliance with environmental requirements such as lead-free and halogen-free status. Confirm that the component matches the exact datasheet revision referenced during design validation. Cross-reference the part number with authorized distributors to ensure authenticity and traceability before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a compact footprint is required alongside high thermal efficiency. The PowerPAK 1212-8 package provides superior thermal dissipation compared to standard SO-8 packages while maintaining a small board area. Ensure the application gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance and switching speed characteristics.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix SiS series of N-channel MOSFETs. It utilizes advanced TrenchFET technology to achieve low on-resistance within a highly compact surface-mount form factor. The PowerPAK 1212-8 package is engineered to minimize thermal impedance, allowing for higher current handling capabilities relative to its physical size compared to traditional packaging technologies.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying absolute maximum ratings and thermal characteristics.