SISS4409DN-T1-GE3

$1.50

Description：P-CHANNEL 40 V (D-S) MOSFET POWE
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bf1672d041e0 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SISS4409DN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is P-CHANNEL 40 V (D-S) MOSFET POWE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SISS4409DN-T1-GE3

Description：P-CHANNEL 40 V (D-S) MOSFET POWE
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：17.2A (Ta), 59.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：126 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5670 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：4.8W (Ta), 56.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8S
Package / Case：PowerPAK® 1212-8S

Single FETs, MOSFETs datasheet and documents for SISS4409DN-T1-GE3

SISS4409DN-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SISS4409DN-T1-GE3 is a single P-channel MOSFET utilizing TrenchFET technology in a PowerPAK 1212-8S package. It features a -40 V drain-source voltage rating and a maximum on-resistance of 0.009 Ω at VGS = -10 V. The device supports a continuous drain current of -59.2 A at TC = 25 °C, with a typical gate charge of 38.1 nC. Thermal resistance from junction to case is typically 1.8 °C/W, and the operating temperature range spans from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Utilizes advanced TrenchFET technology for optimized performance
Features an ultra-low RDS(on) x Qg figure of merit
Includes 100% Rg and UIS testing for reliability

Single FETs, MOSFETs Applications

Battery management systems
Load switch applications
Motor drive control circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status through authorized distributors. Ensure storage conditions maintain device integrity prior to assembly. Validate package dimensions match PowerPAK 1212-8S requirements for PCB footprint compatibility.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses in compact surface-mount layouts. Evaluate thermal dissipation capabilities based on specific ambient temperatures and board copper area. Consider gate charge characteristics when designing high-frequency switching drivers. Verify voltage ratings align with system operational limits under transient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SiSS series of power MOSFETs. It represents a newer generation product designed to replace older discrete solutions. The PowerPAK 1212-8S package offers improved thermal performance compared to traditional SO-8 packages while maintaining a small footprint suitable for dense PCB layouts.