SQP120N06-06_GE3

Description：MOSFET N-CH 60V 119A TO220AB
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tube

SKU:73304d1f24a4 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SQP120N06-06_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 119A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQP120N06-06_GE3

Description：MOSFET N-CH 60V 119A TO220AB
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：119A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：145 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6495 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：175W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for SQP120N06-06_GE3

SQP120N06-06_GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SQP120N06-06 is an automotive-grade N-channel power MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and a maximum continuous drain current of 119 A at 25 °C case temperature. The device exhibits a typical on-state resistance of 0.0045 Ω at VGS = 10 V and ID = 30 A, with a maximum limit of 0.006 Ω. It operates within a junction temperature range of -55 °C to +175 °C and is housed in a TO-220 package.

Single FETs, MOSFETs Feature Summary

AEC-Q101 qualified for automotive reliability standards
TrenchFET power MOSFET architecture providing low thermal resistance
100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
Material categorization compliant with defined environmental standards

Single FETs, MOSFETs Applications

Automotive power distribution systems
High-current DC-DC converter circuits
Motor control applications requiring robust avalanche energy handling

Single FETs, MOSFETs Procurement Notes

Verify the specific revision status against the latest datasheet before finalizing designs. Confirm that the TO-220 package dimensions align with the target PCB footprint and heatsinking requirements. Ensure that the application environment does not exceed the absolute maximum ratings for pulsed drain current or single pulse avalanche energy.

Single FETs, MOSFETs Selection Notes

Select this component when a low on-resistance N-channel MOSFET is required for automotive environments. The TO-220 package is suitable for applications where direct mounting to a heatsink is feasible. Consider the thermal resistance from junction-to-case when designing the cooling solution to maintain operation within the specified temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SQP series of automotive N-channel MOSFETs. The series is characterized by high current capability and ruggedness, specifically designed to meet the stringent reliability requirements of automotive electronics. The SQP120N06-06 represents a specific voltage and current combination within this broader product family.