TJ15S06M3L(T6L1,NQ

Single FETs, MOSFETs Overview

The TJ15S06M3L(T6L1,NQ is a P-channel enhancement mode MOSFET from Toshiba Semiconductor and Storage, part of the U-MOSVI series. It features a DPAK+ surface-mount package with a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 15 A at 25°C ambient temperature. The device offers a maximum on-resistance (Rds(on)) of 48 mΩ at Vgs = 10 V and Id = 15 A. Key electrical parameters include a gate charge (Qg) of 17 nC at 10 V, an input capacitance (Ciss) of 1900 pF at 10 V, and a threshold voltage (Vgs(th)) of 2.5 V max at 1 mA. It supports a junction temperature up to 175°C and has a power dissipation rating of 30 W at case temperature.

Single FETs, MOSFETs Feature Summary

• Utilizes U-MOSVI technology for optimized switching performance and low conduction losses in P-channel configurations.
• Designed for surface-mount applications using the DPAK+ package to facilitate efficient thermal management and PCB integration.
• Features low gate charge characteristics to enable fast switching speeds and reduced driver power requirements.

Single FETs, MOSFETs Applications

• DC-DC converter circuits requiring P-channel high-side switching
• Motor drive interfaces for brushed DC motors
• Power distribution units in industrial control systems

Single FETs, MOSFETs Procurement Notes

Verify the complete ordering code including suffixes such as (T6L1,NQ) against official Toshiba Semiconductor and Storage documentation to ensure correct packaging and variant selection. Confirm that the requested component matches the specific U-MOSVI generation and package type required for your design. Cross-reference datasheet revisions to ensure compatibility with your system's electrical specifications and thermal constraints before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V P-channel MOSFET with moderate current handling capability is required. The 15 A continuous current rating and 48 mΩ on-resistance make it suitable for applications where efficiency and thermal performance are balanced. Ensure the gate drive voltage aligns with the specified 10 V test conditions for optimal Rds(on) performance. Consider the DPAK+ package size for available board space and thermal pad connectivity requirements.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's U-MOSVI family of power MOSFETs, which are engineered for high-speed switching and low loss. The TJ15S06M3L specifically addresses the need for reliable P-channel solutions in compact surface-mount formats. It complements other devices in the series by offering a balance between voltage rating, current capacity, and switching speed for general-purpose power management tasks.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 60 V P-channel specification, DPAK+ package, and similar electrical parameters. Verify pinout compatibility and thermal resistance values. Check if alternative manufacturers offer equivalent U-MOS or trench technology devices with comparable Qg and Rds(on) ratings to ensure seamless integration without redesigning the gate drive circuitry.