TN2524N8-G

Single FETs, MOSFETs Overview

The TN2524N8-G is an N-Channel Enhancement-Mode Vertical DMOS FET manufactured by Microchip Technology. It features a drain-to-source breakdown voltage of 240 V and a maximum static drain-to-source on-state resistance of 6 Ω at VGS = 10V. The device supports a continuous on-state drain current of 360 mA and a pulsed current of 2 A. It operates within an ambient temperature range of -55°C to +150°C with a power dissipation rating of 1.6 W. Key switching parameters include a turn-on delay time of 10 ns, rise time of 10 ns, turn-off delay time of 20 ns, and fall time of 20 ns.

Single FETs, MOSFETs Feature Summary

• Utilizes vertical DMOS structure for high input impedance and positive temperature coefficient inherent in MOS devices.
• Features low threshold voltage suitable for logic-level interfaces including TTL and CMOS.
• Free from thermal runaway and thermally induced secondary breakdown.

Single FETs, MOSFETs Applications

• Logic-Level Interfaces
• Solid-State Relays
• Battery-Operated Systems
• Photovoltaic Drives
• Analog Switches

Single FETs, MOSFETs Procurement Notes

Verify the component marking against the datasheet package outline to confirm authenticity. Ensure the ordering suffix matches the required media type and environmental compliance specifications. Confirm that the supplier provides traceability documentation consistent with Microchip's quality management systems. Validate that the received parts match the specified SOT-89 package dimensions and pin configuration.

Single FETs, MOSFETs Selection Notes

Select this component when a low-threshold enhancement-mode transistor is required for high-voltage switching applications. The device is suitable for designs needing fast switching speeds and low input capacitance. Consider the thermal resistance characteristics and power dissipation limits relative to the expected operating ambient temperature and board layout conditions.

Single FETs, MOSFETs Part Context

This part belongs to the TN2524 series of N-Channel Enhancement-Mode Vertical DMOS FETs. It is housed in a 3-lead SOT-89 package (TO-243AA variation). The 'G' suffix indicates lead-free and RoHS-compliant packaging. The 'N8' designation specifies the 3-lead SOT-89 package form factor.

Single FETs, MOSFETs Replacement Considerations

Consult Microchip technical support or authorized distributors for verified equivalent parts. Do not substitute with generic alternatives without verifying electrical parameter compatibility and package pinout alignment.

Single FETs, MOSFETs FAQ

What is the maximum gate-to-source voltage rating?

The absolute maximum rating for Gate-to-Source Voltage is ±20 V.

Is the device susceptible to secondary breakdown?

No, the device is free from thermal runaway and thermally induced secondary breakdown due to its MOS structure.