TSM340N06CH X0G

$0.96

Description：MOSFET N-CHANNEL 60V 30A TO251
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tube

SKU:16b6484e4fad Category: Single FETs, MOSFETs Brand: Taiwan Semiconductor Corporation

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Product introduction

TSM340N06CH X0G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is MOSFET N-CHANNEL 60V 30A TO251. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TSM340N06CH X0G

Description：MOSFET N-CHANNEL 60V 30A TO251
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：34mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1180 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：66W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251 (IPAK)
Package / Case：TO-251-3 Stub Leads, IPAK

Single FETs, MOSFETs datasheet and documents for TSM340N06CH X0G

TSM340N06CH X0G

Single FETs, MOSFETs Overview

The TSM340N06CH X0G is a 60V N-Channel Power MOSFET manufactured by Taiwan Semiconductor Corporation. It utilizes TO-251S (IPAK) packaging and features a maximum drain-source on-state resistance of 34 mΩ at VGS = 10V and 40 mΩ at VGS = 4.5V. The device supports a continuous drain current of 30A at 25°C case temperature, with a total power dissipation of 40W. Key dynamic parameters include a gate charge of 16.6 nC and a forward transconductance of 8 S.

Single FETs, MOSFETs Feature Summary

Utilizes advanced planar trench technology to achieve low on-resistance for efficient conduction.
Features an integrated body diode with fast reverse recovery characteristics suitable for synchronous rectification.
Designed with robust avalanche energy ratings to withstand inductive switching stress.

Single FETs, MOSFETs Applications

DC-DC converter circuits
Motor control applications
Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'X0G' against official Taiwan Semiconductor documentation to confirm the TO-251S package variant. Ensure compliance with halogen-free requirements indicated by the 'G' designation. Cross-reference thermal resistance values with the target application's heat sinking capabilities to ensure safe operating junction temperatures are maintained under load.

Single FETs, MOSFETs Selection Notes

Select this component when a 60V rating and high current handling capability are required in a compact surface-mount form factor. Evaluate the thermal performance based on the specific PCB layout and ambient conditions. Compare the gate charge specifications against driver capabilities to optimize switching speed and minimize power losses during transitions.

Single FETs, MOSFETs Part Context

This part belongs to the TSM340N06 series from Taiwan Semiconductor Corporation, designed as a general-purpose N-channel enhancement mode power MOSFET. The series includes variants in different packages such as TO-220, ITO-220, and TO-252, offering flexibility for various thermal and mechanical design constraints in power electronics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series include TSM340N06CI C0G (ITO-220), TSM340N06CZ C0G (TO-220), and TSM340N06CP ROG (TO-252). Verify pinout compatibility and thermal resistance differences before implementation.