V60100C-M3/4W

Diode Arrays Overview

The V60100C-M3/4W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration in a TO-220AB package. The device supports a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current of 60 A per device, or 30 A per diode. Peak forward surge current reaches 320 A. Forward voltage drop is specified at 0.79 V maximum at 30 A and 25 °C, reducing to 0.70 V maximum at 30 A and 125 °C. Operating junction temperature ranges from -40 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses.
• Designed for high efficiency operation in switching applications.
• Features matte tin plated leads that are solderable per J-STD-002 standards.

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• DC/DC converters
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix /4W corresponds to the tube packaging format containing 50 units per tube as documented in the manufacturer's ordering information section. Confirm compliance with halogen-free and RoHS directives for commercial grade material categorization. Ensure thermal management design accounts for the typical thermal resistance of 2.5 °C/W per diode to maintain junction temperatures within the specified operating range during continuous load conditions.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for 100 V applications. The TMBS technology offers superior performance compared to standard Schottky diodes regarding leakage current and thermal stability. Consider the 30 A per diode rating for circuit design limits. Verify that the TO-220AB through-hole package fits the PCB layout constraints. Evaluate the forward voltage characteristics against system efficiency requirements at expected operating currents and temperatures.

Diode Arrays Part Context

This part belongs to the V60100 series of dual high voltage Trench MOS Barrier Schottky Rectifiers. The M3 suffix indicates halogen-free, RoHS compliant construction. The base product number V60100 identifies the electrical specifications shared across different packaging options. Vishay General Semiconductor produces this line for industrial and consumer electronics requiring reliable high-frequency rectification.

Diode Arrays Replacement Considerations

V60100C-E3/4W is a confirmed substitute part number within the same family offering identical electrical characteristics and packaging.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage (VRRM) is 100 V.

How is the internal diode configuration arranged?

The device utilizes a common cathode configuration with two independent diodes sharing a single cathode terminal.

What is the peak forward surge current rating?

The peak forward surge current (IFSM) is rated at 320 A for an 8.3 ms single half sine-wave superimposed on rated load per diode.