VBT6045CBP-M3/4W

Diode Arrays Overview

The VBT6045CBP-M3/4W is a dual low-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration in a TO-263AB surface-mount package. The device supports a maximum repetitive peak reverse voltage of 45 V and a total average forward rectified current of 60 A, with 30 A per diode. Peak forward surge current reaches 320 A. Forward voltage drop is rated at 0.47 V at 15 A and 0.54 V at 30 A. Junction temperature can reach 200 °C in DC bypass mode.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage drop and reduced power losses.
• Designed for high-efficiency operation with a maximum junction temperature of 200 °C in solar bypass applications.
• Complies with JESD 201 class 1A whisker test requirements via the M3 suffix.

Diode Arrays Applications

• Solar cell junction box bypass protection
• Photovoltaic panel string protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm packaging type. The /4W suffix indicates tube packaging, while other suffixes may denote tape and reel configurations. Ensure the component meets RoHS compliance and halogen-free material standards as specified in the datasheet before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component when designing photovoltaic systems requiring high thermal stability and low conduction losses. The 200 °C junction rating allows for robust performance in high-temperature environments typical of solar installations. Verify that the application operates within the 45 V reverse voltage limit and does not exceed the 30 A per-diode continuous current rating.

Diode Arrays Part Context

This part belongs to Vishay's TMBS series of low-voltage Schottky rectifiers. It is specifically engineered for photovoltaic bypass applications where high reliability and thermal endurance are critical. The TO-263AB package facilitates efficient heat dissipation through direct mounting to a heatsink.

Diode Arrays Replacement Considerations

VBT6045C-M3/4W

Diode Arrays FAQ

What is the maximum junction temperature for this device?

The maximum junction temperature is 200 °C when used in DC forward current without reverse bias, such as in solar bypass mode applications.

How is the forward voltage drop specified?

The forward voltage drop is typically 0.33 V at 10 A and 125 °C, rising to 0.54 V at 30 A and 25 °C.

What does the M3 suffix indicate regarding material composition?

The M3 suffix indicates that the base part number is halogen-free, RoHS-compliant, and meets the JESD 201 class 1A lead whisker test requirements.