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Single Bipolar Transistors

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion. BJTs come in two varieties - NPN and PNP - which refer to the sequence of semiconductor layers that make up the transistor. NPN transistors consist of a thin P-type semiconductor between two N-type materials, while PNP transistors have an N-type semiconductor between two P-types. This gives the two types opposite polarity operation. NPN transistors sink current, while PNP transistors source current.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Rohm SemiconductorTRANS PNP 50V 1A MPT3Tape & Reel (TR),Cut Tape (CT)MPT3Surface Mount-150°C (TJ)
2SA1907
2SA1907
$1.75
Sanken Electric USA Inc.TRANS PNP 80V 6A TO-3PFBulkTO-3PFThrough Hole-150°C (TJ)
2SA1908
2SA1908
$1.86
Sanken Electric USA Inc.TRANS PNP 120V 8A TO-3PFBulkTO-3PFThrough Hole-150°C (TJ)
2SA1909
2SA1909
$2.08
Sanken Electric USA Inc.TRANS PNP 140V 10A TO-3PFBulkTO-3PFThrough Hole-150°C (TJ)
Toshiba Semiconductor and StorageTRANS PNP 180V 2A TO-220NISBulkTO-220NISThrough Hole-150°C (TJ)
Toshiba Semiconductor and StorageTRANS PNP 180V 2A TO-220NISBulkTO-220NISThrough Hole-150°C (TJ)
Toshiba Semiconductor and StorageTRANS PNP 180V 2A TO-220NISBulkTO-220NISThrough Hole-150°C (TJ)
Toshiba Semiconductor and StorageTRANS PNP 180V 2A TO-220NISBulkTO-220NISThrough Hole-150°C (TJ)
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