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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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Compare RC, crystal and MEMS oscillator circuits. Check ppm, jitter, load capacitance, startup margin and output compatibility before choosing a clock source.
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Find out when a bare shock switch needs a pull resistor, when an MCU internal pull-up is enough, and why sensor modules and piezo…
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Vishay Intertechnology, Inc., a global leader in discrete semiconductors and passive electronic components, has officially announced a price adjustment for its Metal-Oxide-Semiconductor Field-Effect Transistors…
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